TY - JOUR
T1 - Change of Structural Behaviors of Organo-Silane Exposed Graphene Nanoflakes
AU - Pao, CW
AU - Ray, SC
AU - Tsai, HM
AU - Chen, HC
AU - Lin, IN
AU - Pong, WF
AU - Chiou, JW
AU - Tsai, MH
AU - Shang, NG
AU - Papakonstantinou, P
AU - GuO, GH
PY - 2010/4
Y1 - 2010/4
N2 - The electronic structures of graphene nanoflakes (GNFs) exposed to an organo-silane precursor [tetramethylsilane, TMS, Si(CH3)4] were studied using electron field emission (EFE), Raman spectroscopy, X-ray absorption near-edge structure (XANES), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES), and first-principles calculation. The results of XANES, XPS, and Raman spectroscopy indicate that the silyl radical strong covalent bonds were formed in GNFs, which induced local structural relaxations and enhanced sp3 hybridization. Comparison of calculated electronic structure, XANES, and XES spectra of Si-treated GNFs suggests that the Si atom substitutes one 3-fold coordinated C atom in a given graphene layer and relaxes outward to form sp3 bonding with another C atom in the adjacent graphene layer. The EFE measurements show an increase in the turn-on electric field with the increase of the Si content, which suggests an enhancement of the nonmetallic sp3 bonding.
AB - The electronic structures of graphene nanoflakes (GNFs) exposed to an organo-silane precursor [tetramethylsilane, TMS, Si(CH3)4] were studied using electron field emission (EFE), Raman spectroscopy, X-ray absorption near-edge structure (XANES), X-ray photoelectron spectroscopy (XPS), X-ray emission spectroscopy (XES), and first-principles calculation. The results of XANES, XPS, and Raman spectroscopy indicate that the silyl radical strong covalent bonds were formed in GNFs, which induced local structural relaxations and enhanced sp3 hybridization. Comparison of calculated electronic structure, XANES, and XES spectra of Si-treated GNFs suggests that the Si atom substitutes one 3-fold coordinated C atom in a given graphene layer and relaxes outward to form sp3 bonding with another C atom in the adjacent graphene layer. The EFE measurements show an increase in the turn-on electric field with the increase of the Si content, which suggests an enhancement of the nonmetallic sp3 bonding.
U2 - 10.1021/jp9121563
DO - 10.1021/jp9121563
M3 - Article
SN - 1932-7455
VL - 114
SP - 8161
EP - 8166
JO - Journal Of Physical Chemistry C
JF - Journal Of Physical Chemistry C
ER -