Carbon nanotube growth activated by quantum-confined silicon nanocrystals

D Mariotti, V Svrcek, A Mathur, C Dickinson, K Matsubara, M Kondo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH 4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.
LanguageEnglish
Pages122001
JournalJournal of Physics D: Applied Physics
Volume46
Issue number12
Publication statusPublished - 2013

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nanocrystals
carbon nanotubes
silicon
etching
laser ablation
micrometers
fragmentation
low pressure
nucleation
methylidyne
catalysts
metals
water
lasers

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Mariotti, D., Svrcek, V., Mathur, A., Dickinson, C., Matsubara, K., & Kondo, M. (2013). Carbon nanotube growth activated by quantum-confined silicon nanocrystals. Journal of Physics D: Applied Physics, 46(12), 122001.
Mariotti, D ; Svrcek, V ; Mathur, A ; Dickinson, C ; Matsubara, K ; Kondo, M. / Carbon nanotube growth activated by quantum-confined silicon nanocrystals. In: Journal of Physics D: Applied Physics. 2013 ; Vol. 46, No. 12. pp. 122001.
@article{2864336d56384b2da9324ac532222ce5,
title = "Carbon nanotube growth activated by quantum-confined silicon nanocrystals",
abstract = "We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH 4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.",
author = "D Mariotti and V Svrcek and A Mathur and C Dickinson and K Matsubara and M Kondo",
year = "2013",
language = "English",
volume = "46",
pages = "122001",
journal = "Journal of Physics D: Applied Physics",
issn = "0022-3727",
number = "12",

}

Mariotti, D, Svrcek, V, Mathur, A, Dickinson, C, Matsubara, K & Kondo, M 2013, 'Carbon nanotube growth activated by quantum-confined silicon nanocrystals', Journal of Physics D: Applied Physics, vol. 46, no. 12, pp. 122001.

Carbon nanotube growth activated by quantum-confined silicon nanocrystals. / Mariotti, D; Svrcek, V; Mathur, A; Dickinson, C; Matsubara, K; Kondo, M.

In: Journal of Physics D: Applied Physics, Vol. 46, No. 12, 2013, p. 122001.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Carbon nanotube growth activated by quantum-confined silicon nanocrystals

AU - Mariotti, D

AU - Svrcek, V

AU - Mathur, A

AU - Dickinson, C

AU - Matsubara, K

AU - Kondo, M

PY - 2013

Y1 - 2013

N2 - We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH 4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.

AB - We report on the use of silicon nanocrystals (Si-ncs) to activate nucleation and growth of carbon nanotubes (CNTs) without using any metal catalyst. Si-ncs with different surface characteristics have been exposed to the same CH 4 low-pressure plasma treatment producing quite different results. Specifically, Si-ncs prepared by laser ablation in water have contributed to the formation of micrometre-sized silicon spherical particles. On the other hand, Si-ncs prepared by electrochemical etching did not induce any specific growth while the third type of Si-ncs, prepared by electrochemical etching and treated by a laser fragmentation process, induced the growth of multi-walled CNTs. The different outcomes of the same plasma process are attributed to the diverse surface features presented by the Si-ncs.

M3 - Article

VL - 46

SP - 122001

JO - Journal of Physics D: Applied Physics

T2 - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

SN - 0022-3727

IS - 12

ER -

Mariotti D, Svrcek V, Mathur A, Dickinson C, Matsubara K, Kondo M. Carbon nanotube growth activated by quantum-confined silicon nanocrystals. Journal of Physics D: Applied Physics. 2013;46(12):122001.