Abstract
| Language | English |
|---|---|
| Pages | 1342-1345 |
| Journal | Diamond and Related Materials |
| Volume | 13 |
| Issue number | 4-8 |
| DOIs | |
| Publication status | Published - Apr 2004 |
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Keywords
- DLC
- coatings
- diffusion
- surface characterization
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A study of ta-C, a-C : H and Si-a : C : H thin films on polymer substrates as a gas barrier. / Abbas, GA; McLaughlin, JAD; Harkin-Jones, E.
In: Diamond and Related Materials, Vol. 13, No. 4-8, 04.2004, p. 1342-1345.Research output: Contribution to journal › Article
TY - JOUR
T1 - A study of ta-C, a-C : H and Si-a : C : H thin films on polymer substrates as a gas barrier
AU - Abbas, GA
AU - McLaughlin, JAD
AU - Harkin-Jones, E
N1 - 14th European Conference on Diamond, Diamond-like Materials, Carbon Nanotubes, Nitrides and Silicon Carbide, Salzburg, AUSTRIA, SEP 08-12, 2003
PY - 2004/4
Y1 - 2004/4
N2 - Two types of diamond-like carbon (DLC) films were grown on Poly (ethylene terepthalate) (PET) substrates have been investigated for density, internal stress, gas permeability and structural properties by an X-ray reflectometry, surface profilometer, Raman spectroscopy and water vapour permeation analysis system, respectively. The high density tetrahedral amorphous carbon (ta-C) films (3.27 g/cm(3)) prepared by filtered vacuum cathodic arc (FCVA) showed unexpected high water vapour transmission rate (WVTR) (1.3 g/m(2) day) and a surface covered by a network of deep micro-cracks, which is due to intrinsic stress inside the ta-C films (up to 12 GPa). The soft Si doped hydrogenated amorphous carbon (Si-a:C:H) films prepared by plasma enhanced chemical vapour deposition (PECVD) exhibited low transmission rate (0.03 g/m(2) day) with a water vapour reduction factor up to 98% and a surface almost completely free of micro-cracks. Si incorporation in the a-C:H films reduced both the film density from 2.3 g/cm(3) to 1.85 g/cm(3) and the compressive stress to < 0.5 GPa. This could be understood by two possibilities. Firstly, the increasing in the hydrogen content within the films (as indicated by increasing the Raman background slope) developed more polymer-like bonds, which weakens the microstructure. Second, replacing the stronger C-C bonds (3.7 eV) by C-Si (3.21 eV) bonds where the relaxation of residual stress would occur with large strains in the C-Si bonds. (C) 2003 Elsevier B.V. All rights reserved.
AB - Two types of diamond-like carbon (DLC) films were grown on Poly (ethylene terepthalate) (PET) substrates have been investigated for density, internal stress, gas permeability and structural properties by an X-ray reflectometry, surface profilometer, Raman spectroscopy and water vapour permeation analysis system, respectively. The high density tetrahedral amorphous carbon (ta-C) films (3.27 g/cm(3)) prepared by filtered vacuum cathodic arc (FCVA) showed unexpected high water vapour transmission rate (WVTR) (1.3 g/m(2) day) and a surface covered by a network of deep micro-cracks, which is due to intrinsic stress inside the ta-C films (up to 12 GPa). The soft Si doped hydrogenated amorphous carbon (Si-a:C:H) films prepared by plasma enhanced chemical vapour deposition (PECVD) exhibited low transmission rate (0.03 g/m(2) day) with a water vapour reduction factor up to 98% and a surface almost completely free of micro-cracks. Si incorporation in the a-C:H films reduced both the film density from 2.3 g/cm(3) to 1.85 g/cm(3) and the compressive stress to < 0.5 GPa. This could be understood by two possibilities. Firstly, the increasing in the hydrogen content within the films (as indicated by increasing the Raman background slope) developed more polymer-like bonds, which weakens the microstructure. Second, replacing the stronger C-C bonds (3.7 eV) by C-Si (3.21 eV) bonds where the relaxation of residual stress would occur with large strains in the C-Si bonds. (C) 2003 Elsevier B.V. All rights reserved.
KW - DLC
KW - coatings
KW - diffusion
KW - surface characterization
U2 - 10.1016/j.diamond.2003.10.084
DO - 10.1016/j.diamond.2003.10.084
M3 - Article
VL - 13
SP - 1342
EP - 1345
JO - Diamond and Related Materials
T2 - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 4-8
ER -