A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates

JF Zhao, P Lemoine, ZH Liu, JP Quinn, PD Maguire, JAD McLaughlin

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

Silicon incorporation into DLC films prepared by plasma enhanced chemical vapour deposition (PECVD) was studied by a combination of surface analysis methods and nanomechanical measurements; namely XPS, Raman spectroscopy and nanoindentation. Addition of silicon into the films leads to an increase in the sp(3) contribution, as measured from XPS analysis, and a decrease in the Raman band intensity ratio I-G/I-G. These changes are consistent with an evolving C-C bond network. The mechanical properties were first studied as a function of film thickness and indentation depth to assess the effect of substrate proximity. Silicon incorporation produces films with lower hardness and Young's modulus. It is suggested that, for such a PECVD process, the weakening of the mechanical properties is caused by the increased hydrogen content in the doped films, as shown by the increased Raman background slope, These tendencies are attributable to the development of polymer-like chains, which weakens the inter-molecular structure ofthe films. (C) 2001 Elsevier Science B.V. All rights reserved.
LanguageEnglish
Pages1070-1075
JournalDiamond and Related Materials
Volume10
Issue number3-7, S
DOIs
Publication statusPublished - Mar 2001

Fingerprint

Silicon
Microstructure
Substrates
Plasma enhanced chemical vapor deposition
X ray photoelectron spectroscopy
Mechanical properties
Surface analysis
Nanoindentation
Indentation
Molecular structure
Film thickness
Raman spectroscopy
Hydrogen
Polymers
Elastic moduli
Hardness

Keywords

  • DLC film
  • silicon incorporation
  • XPS
  • nanoindentation

Cite this

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title = "A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates",
abstract = "Silicon incorporation into DLC films prepared by plasma enhanced chemical vapour deposition (PECVD) was studied by a combination of surface analysis methods and nanomechanical measurements; namely XPS, Raman spectroscopy and nanoindentation. Addition of silicon into the films leads to an increase in the sp(3) contribution, as measured from XPS analysis, and a decrease in the Raman band intensity ratio I-G/I-G. These changes are consistent with an evolving C-C bond network. The mechanical properties were first studied as a function of film thickness and indentation depth to assess the effect of substrate proximity. Silicon incorporation produces films with lower hardness and Young's modulus. It is suggested that, for such a PECVD process, the weakening of the mechanical properties is caused by the increased hydrogen content in the doped films, as shown by the increased Raman background slope, These tendencies are attributable to the development of polymer-like chains, which weakens the inter-molecular structure ofthe films. (C) 2001 Elsevier Science B.V. All rights reserved.",
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A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates. / Zhao, JF; Lemoine, P; Liu, ZH; Quinn, JP; Maguire, PD; McLaughlin, JAD.

In: Diamond and Related Materials, Vol. 10, No. 3-7, S, 03.2001, p. 1070-1075.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A study of microstructure and nanomechanical properties of silicon incorporated DLC films deposited on silicon substrates

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AU - Lemoine, P

AU - Liu, ZH

AU - Quinn, JP

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AU - McLaughlin, JAD

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AB - Silicon incorporation into DLC films prepared by plasma enhanced chemical vapour deposition (PECVD) was studied by a combination of surface analysis methods and nanomechanical measurements; namely XPS, Raman spectroscopy and nanoindentation. Addition of silicon into the films leads to an increase in the sp(3) contribution, as measured from XPS analysis, and a decrease in the Raman band intensity ratio I-G/I-G. These changes are consistent with an evolving C-C bond network. The mechanical properties were first studied as a function of film thickness and indentation depth to assess the effect of substrate proximity. Silicon incorporation produces films with lower hardness and Young's modulus. It is suggested that, for such a PECVD process, the weakening of the mechanical properties is caused by the increased hydrogen content in the doped films, as shown by the increased Raman background slope, These tendencies are attributable to the development of polymer-like chains, which weakens the inter-molecular structure ofthe films. (C) 2001 Elsevier Science B.V. All rights reserved.

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