A facile method for the deposition of thermally stable diamond like carbon thin films via carbon dioxide precursor gas

Sekhar C. Ray, Gourav Bhattacharya, Mark A. Miller, Sweety Sarma, Ravi Kant Upadhay, JAD McLaughlin, Susanta Sinha Roy

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon (DLC) and silicon doped-DLC films were investigated. The DLC and DLC:Si are deposited on various (silicon, stainless steel and aluminium) substrates within the thickness range 200–400 nm by radio frequency plasma-enhanced chemical vapour deposition (PECVD) method. Carbon dioxide (CO2) precursor gas is used to reduce the hydrogen content and to increase the adhesion of the films to the substrate. The X-ray photoelectron spectroscopy, Raman spectroscopy, surface profilometry and nano-indentation are used to study the chemical composition, microstructure, thermal stability and mechanical properties of the films. For CO2 precursor made DLC samples, Raman parameters did not show any significant change up to temperature 500 °C. The lowest coefficient of friction was found to be 0.298 for the DLC:Si film prepared with CO2 at room temperature and corresponded lowest wear rate of 1.77 × 10− 10 mm3/Nm. The micro-structural properties at various annealing temperature were critically analysed by monitoring graphitization behaviour and oxidation of the film surface
LanguageEnglish
JournalDiamond and Related Materials
Early online date29 Jul 2016
DOIs
Publication statusE-pub ahead of print - 29 Jul 2016

Fingerprint

Diamond
Carbon films
Carbon Dioxide
Diamonds
Carbon dioxide
Carbon
Gases
Silicon
Thin films
Thermodynamic stability
Diamond like carbon films
Graphitization
Profilometry
Stainless Steel
Substrates
Nanoindentation
Plasma enhanced chemical vapor deposition
Aluminum
Temperature
Raman spectroscopy

Keywords

  • thermally stable diamond like carbon thin films

Cite this

Ray, Sekhar C. ; Bhattacharya, Gourav ; Miller, Mark A. ; Sarma, Sweety ; Upadhay, Ravi Kant ; McLaughlin, JAD ; Roy, Susanta Sinha. / A facile method for the deposition of thermally stable diamond like carbon thin films via carbon dioxide precursor gas. In: Diamond and Related Materials. 2016.
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abstract = "The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon (DLC) and silicon doped-DLC films were investigated. The DLC and DLC:Si are deposited on various (silicon, stainless steel and aluminium) substrates within the thickness range 200–400 nm by radio frequency plasma-enhanced chemical vapour deposition (PECVD) method. Carbon dioxide (CO2) precursor gas is used to reduce the hydrogen content and to increase the adhesion of the films to the substrate. The X-ray photoelectron spectroscopy, Raman spectroscopy, surface profilometry and nano-indentation are used to study the chemical composition, microstructure, thermal stability and mechanical properties of the films. For CO2 precursor made DLC samples, Raman parameters did not show any significant change up to temperature 500 °C. The lowest coefficient of friction was found to be 0.298 for the DLC:Si film prepared with CO2 at room temperature and corresponded lowest wear rate of 1.77 × 10− 10 mm3/Nm. The micro-structural properties at various annealing temperature were critically analysed by monitoring graphitization behaviour and oxidation of the film surface",
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A facile method for the deposition of thermally stable diamond like carbon thin films via carbon dioxide precursor gas. / Ray, Sekhar C.; Bhattacharya, Gourav; Miller, Mark A.; Sarma, Sweety; Upadhay, Ravi Kant; McLaughlin, JAD; Roy, Susanta Sinha.

In: Diamond and Related Materials, 29.07.2016.

Research output: Contribution to journalArticle

TY - JOUR

T1 - A facile method for the deposition of thermally stable diamond like carbon thin films via carbon dioxide precursor gas

AU - Ray, Sekhar C.

AU - Bhattacharya, Gourav

AU - Miller, Mark A.

AU - Sarma, Sweety

AU - Upadhay, Ravi Kant

AU - McLaughlin, JAD

AU - Roy, Susanta Sinha

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N2 - The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon (DLC) and silicon doped-DLC films were investigated. The DLC and DLC:Si are deposited on various (silicon, stainless steel and aluminium) substrates within the thickness range 200–400 nm by radio frequency plasma-enhanced chemical vapour deposition (PECVD) method. Carbon dioxide (CO2) precursor gas is used to reduce the hydrogen content and to increase the adhesion of the films to the substrate. The X-ray photoelectron spectroscopy, Raman spectroscopy, surface profilometry and nano-indentation are used to study the chemical composition, microstructure, thermal stability and mechanical properties of the films. For CO2 precursor made DLC samples, Raman parameters did not show any significant change up to temperature 500 °C. The lowest coefficient of friction was found to be 0.298 for the DLC:Si film prepared with CO2 at room temperature and corresponded lowest wear rate of 1.77 × 10− 10 mm3/Nm. The micro-structural properties at various annealing temperature were critically analysed by monitoring graphitization behaviour and oxidation of the film surface

AB - The thermal stability and tribological performance of silicon- and oxygen-incorporated diamond-like carbon (DLC) and silicon doped-DLC films were investigated. The DLC and DLC:Si are deposited on various (silicon, stainless steel and aluminium) substrates within the thickness range 200–400 nm by radio frequency plasma-enhanced chemical vapour deposition (PECVD) method. Carbon dioxide (CO2) precursor gas is used to reduce the hydrogen content and to increase the adhesion of the films to the substrate. The X-ray photoelectron spectroscopy, Raman spectroscopy, surface profilometry and nano-indentation are used to study the chemical composition, microstructure, thermal stability and mechanical properties of the films. For CO2 precursor made DLC samples, Raman parameters did not show any significant change up to temperature 500 °C. The lowest coefficient of friction was found to be 0.298 for the DLC:Si film prepared with CO2 at room temperature and corresponded lowest wear rate of 1.77 × 10− 10 mm3/Nm. The micro-structural properties at various annealing temperature were critically analysed by monitoring graphitization behaviour and oxidation of the film surface

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